High dielectrics on InGaAs and GaN - Growth, interfacial structural studies, and surface Fermi level unpinning
نویسندگان
چکیده
1. growth of high dielectric constant oxides on InGaAs and GaN using molecular beam epitaxy (MBE) and atomic layer deposition (ALD) 2. structural studies on hetero-structures of nano-thick Al2O3, HfO2, and Ga2O3(Gd2O3)/ InGaAs (and GaN) using high-resolution x-ray reflectivity using in-situ/ex-situ high-resolution synchrotron radiation and high-resolution transmission electron microscopy 3. correlation between electrical measurements and structural studies leading to the understanding of surface Fermi level pinning/unpinning
منابع مشابه
High performance submicron inversion-type enhancement-mode InGaAs MOSFETs with ALD Al2O3, HfO2 and HfAlO as gate dielectrics
High-performance inversion-type enhancement-mod nchannel In0.53Ga0.47As MOSFETs with atomic layer deposited (ALD) Al2O3, HfO2, and HfAlO as gate dielectrics are demonstrated. The ALD process on III-V compound semiconductors enables the formation of high-quality gate oxides and unpinning of Fermi level on III-V in general. A 0.5-μm gate-length MOSFET with an Al2O3 gate oxide thickness of 8 nm sh...
متن کاملPhoto-Induced Unpinning of Fermi Level in WO3
Atomic force and high resolution scanning tunneling analyses were carried out on nanostructured WO3 films. It turned out that the band gap measured by scanning tunneling spectroscopy at surface is lower than the band gap reported in the literature. This effect is attributed to the high density of surface states in this material, which allows tunneling into these states. Such a high density of s...
متن کاملSimplified surface preparation for GaAs passivation using atomic layer-deposited high-kappa dielectrics
Atomic layer deposition (ALD) provides a unique opportunity to integrate high-quality gate dielectrics on III–V compound semiconductors. The physics and chemistry of a III–V compound semiconductor surface or interface are problems so complex that even after three decades research understanding is still limited. We report a simplified surface preparation process using ammonium hydroxide (NH4OH) ...
متن کاملInterfacial chemistry of oxides on InxGa(1-x)As and implications for MOSFET applications
The prospect of enhanced device performance from III–V materials has been recognized for at least 50 years, and yet, relative to the phenomenal size of the Si-based IC industry, these materials fulfilled only specific niches and were often referred to as ‘‘the material of the future’’ [1]. A key restriction enabling widespread use of III–V materials is the lack of a high quality, natural insula...
متن کاملX-ray photoemission determination of the Schottky barrier height of metal contacts to n–GaN and p–GaN
Synchrotron radiation-based x-ray photoemission spectroscopy was used to study the surface Fermi level position within the band gap for thin metal overlayers of Au, Al, Ni, Ti, Pt, and Pd on n–GaN and p–GaN. Nonequilibrium effects were taken into account by measuring the Fermi edge of the metal overlayer. There are two different behaviors observed for the six metals studied. For Au, Ti, and Pt,...
متن کامل